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絲印：FDS6912A；Package：SOP-8；30V Dual N-Channel MOSFET

Features ? Fast switching speed ? Low gate charge ? High performance trench technology for extremely low RDS(ON) ? High power and current handling capability (VGS = 10V) VDS (V) = 30V ID = 6A RDS(ON)

文件：387.35 Kbytes 頁數(shù)：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

絲印：FDS6912A；Package：SO-8；Dual N-Channel Logic Level PowerTrenchò MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：224.24 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

雙 N 溝道，邏輯電平，PowerTrench? MOSFET，30V，6A，28mΩ

這些N溝道邏輯電平MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。 這些器件非常適合需要線路內(nèi)低功率損耗和快速開關(guān)的低電壓和電池供電應(yīng)用。; ?6 A，30 V\n?RDS(ON) = 28 mΩ @ VGS = 10 V\n?RDS(ON) = 35 mΩ @ VGS = 4.5 V\n?快速開關(guān)速度\n?低柵極電荷\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(on)\n?高功率和高電流處理能力\n;

ONSEMI

安森美半導(dǎo)體

Dual N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：222.94 Kbytes 頁數(shù)：4 Pages

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

Dual N-Channel Logic Level PowerTrench MOSFET

文件：121.37 Kbytes 頁數(shù)：5 Pages

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

Dual N-Channel Logic Level PowerTrench MOSFET

文件：121.37 Kbytes 頁數(shù)：5 Pages

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司